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2SA634 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors.

General Description

·With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -5 -3.0 -6.0 -0.6 1.2 UNIT V V V A A A PT Total power dissipation TC=25℃ 10 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

2SA634 MAX UNIT VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA;

IB=0 -30 V hFE-1 DC current gain IC=-20mA ;

2SA634 Distributor

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