Datasheet Details
| Part number | 2SA652 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.39 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA652-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA652 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.39 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA652-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Contunuous Collector Current IC= -1A ·Power DissipationPC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA652 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
| Part Number | Description |
|---|---|
| 2SA650 | PNP Transistor |
| 2SA651 | Silicon PNP Transistor |
| 2SA653 | POWER TRANSISTOR |
| 2SA656 | POWER TRANSISTOR |
| 2SA657 | POWER TRANSISTOR |
| 2SA658 | Power Transistor |
| 2SA626 | PNP Transistor |
| 2SA627 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |