2SA663
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.3V(Max.)@ IC= -5A
- plement to Type 2SC793
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-7
Emitter Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power...
