Datasheet Details
| Part number | 2SA663 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA663_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA663.
| Part number | 2SA663 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA663_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.3V(Max.)@ IC= -5A ·plement to Type 2SC793 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA663 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA626 | PNP Transistor |
| 2SA627 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |
| 2SA636 | POWER TRANSISTOR |
| 2SA636A | POWER TRANSISTOR |
| 2SA648 | PNP Transistor |
| 2SA649 | PNP Transistor |
| 2SA650 | PNP Transistor |
| 2SA651 | Silicon PNP Transistor |