2SA714 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Power switching applications.

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2SA714 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA714
Manufacturer	Inchange Semiconductor
File Size	189.46 KB
Description	POWER TRANSISTOR
Datasheet	2SA714 Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -7 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA714 isc website：www.iscsemi.