Datasheet Details
| Part number | 2SA714 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.46 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA714_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA714 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.46 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA714_InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -7 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA714 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA714 | Silicon POwer Transistors | SavantIC |
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