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2SA748 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Large Power Dissipation- : PC= 15W@ TC= 25℃ Complement to Type 2SC1398 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications

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isc Silicon PNP Power Transistor 2SA748 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Large Power Dissipation- : PC= 15W@ TC= 25℃ ·Complement to Type 2SC1398 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.