Datasheet Details
| Part number | 2SA766 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.13 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA766_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA766.
| Part number | 2SA766 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.13 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA766_InchangeSemiconductor.pdf |
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·Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA766 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.2A;
L= 25mH, RBE= 5kΩ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA766 | Silicon POwer Transistors | SavantIC |
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