2SA766 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) High Collector Power Dissipation Complement to Type 2SC1450 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Line-operated vertical deflection output Medium power amp

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2SA766 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA766
Manufacturer	Inchange Semiconductor
File Size	209.13 KB
Description	POWER TRANSISTOR
Datasheet	2SA766 Datasheet

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isc Silicon PNP Power Transistor 2SA766 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.