Datasheet Details
| Part number | 2SA807 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.95 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA807_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA807 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.95 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA807_InchangeSemiconductor.pdf |
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·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SA807 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA807 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA807 | Silicon POwer Transistors | SavantIC |
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