Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
DC Current Gain
: hFE= 40-240@ IC= -0.5A
Complement to Type 2SC1669
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Full PDF Text Transcription for 2SA839 (Reference)
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isc Silicon PNP Power Transistor 2SA839 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-240@ IC= -0.5A ·Complement to T...
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-150V(Min) ·DC Current Gain : hFE= 40-240@ IC= -0.5A ·Complement to Type 2SC1669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
2SA839 Datasheet
