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2SA839 - POWER TRANSISTOR

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Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) DC Current Gain : hFE= 40-240@ IC= -0.5A Complement to Type 2SC1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Audio power amplifier applications.

Driver stag

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Datasheet Details

Part number 2SA839
Manufacturer Inchange Semiconductor
File Size 205.86 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA839 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-240@ IC= -0.5A ·Complement to Type 2SC1669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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