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2SA878 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: ..net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877.

General Description

·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Remended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2SA878 2SA877 VCEO Collector-emitter voltage 2SA878 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -6 -10 100 150 -55~150 V A W ℃ ℃ Open emitter -120 -80 V CONDITIONS VALUE -80 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA877 V(BR)CEO Collector-emitter breakdown voltage 2SA878 V(BR)EBO VCEsat Emitter-base breakdown voltage Collector-emitter saturation voltage 2SA877 ICBO Collector cut-off current 2SA878 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-120V;

IE=0 VEB=-6V;

IC=0 IC=-3A ;

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