2SA885 Datasheet | Inchange Semiconductor

DESCRIPTION - With TO-126 package - plement to type 2SC1846 - Low collector-emitter saturation voltage APPLICATIONS - For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base - Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE -45 -35 -5 -1 -1.5 1.2- 1 PC Collector power dissipation TC=25℃ 5- Tj Tstg Junction temperature Storage temperature UNIT V V V A A 150 -55~150 ℃ ℃ Note) - 1: Without heat sink - 2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO ICEO IEBO h FE-1 h FE-2 COB f T PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2m A;IB=0 IC=-10μA ;IE=0 IC=-0.5A ;IB=-50m A VCB=-20V; IE=0 VCE=-20V; IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=50m A ; VCB=-10V,f=200MHz 85 50 20 200 MIN -35 -45 TYP. UNIT V V -0.5 -0.1 -100 -10 340 V μA μA μA 30 p F MHz ‹ Q h FE-1 Classifications R 120-240 S 170-340 85-170 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions Inchange Semiconductor Product Specification Silicon PNP Power...