Datasheet Details
| Part number | 2SA971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.00 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA971_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA971.
| Part number | 2SA971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.00 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA971_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA971 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
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| 2SA914 | POWER TRANSISTOR |
| 2SA940 | Silicon PNP Power Transistor |
| 2SA957 | POWER TRANSISTOR |
| 2SA958 | POWER TRANSISTOR |
| 2SA959 | POWER TRANSISTOR |