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2SAR586D - Silicon PNP Power Transistor

General Description

Suitable for middle power drivers Low VCE(sat) VCE(sat)≤-0.32V@(IC=-2A,IB=-100mA) Complementary NPN types:2SCR586D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MA

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.32V@(IC=-2A,IB=-100mA) ·Complementary NPN types:2SCR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.