Datasheet Details
| Part number | 2SB1144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.04 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1144-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.04 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1144-InchangeSemiconductor.pdf |
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··Low Collector Saturation Voltage : VCE(sat)= -0.3V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SD1684 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1144 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1144 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1144 | PNP Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
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