Low Collector Saturation Voltage
: VCE(sat)= -0.3V(Max)@IC= -0.5A
Wide Area of Safe Operation
Complement to Type 2SD1684
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for 100V/1.5A Switching Applications
ABSOL
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isc Silicon PNP Power Transistor
DESCRIPTION ··Low Collector Saturation Voltage
: VCE(sat)= -0.3V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SD1684 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for 100V/1.5A Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-2
A
10 W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1144
isc website：www.iscsemi.
2SB1144 Datasheet
