Datasheet Details
| Part number | 2SB1204 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 254.61 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1204-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1204 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 254.61 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1204-InchangeSemiconductor.pdf |
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·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 20 W 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1204 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
IB= -200mA VBE(sat) Base-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1204 | PNP Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SB1204 | Bipolar Transistor | ON Semiconductor |
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2SB1204 | PNP Transistors | Kexin |
| Part Number | Description |
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| 2SB1201 | Silicon PNP Power Transistor |
| 2SB1202 | Silicon PNP Power Transistor |
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