2SB1275 Description
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1275 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-50uA -160 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter...