2SB1290 Datasheet PDF - Inchange Semiconductor Silicon PNP Power Transistor Specs

2SB1290 - Silicon PNP Power Transistor

Datasheet Summary

Description

High Collector Current:: IC= -7A Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A Wide Area of Safe Operation Complement to Type 2SD1833 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low freq

Datasheet Details

Part number	2SB1290
Manufacturer	Inchange Semiconductor
File Size	219.01 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB1290 Datasheet
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1290 isc website：www.

Published: Aug 28, 2017 |