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2SB1562 - Silicon PNP Power Transistor

General Description

High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.6 A 25 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1562 isc website：www.