Datasheet Details
| Part number | 2SB1562 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.94 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1562_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1562 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.94 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1562_InchangeSemiconductor.pdf |
|
|
|
·High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.6 A 25 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1562 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1562 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -20mA VBE(on) Base-Emitter On Voltage IC= -0.5A ;
VCE= -5V ICBO Collector Cutoff Current VCB= -60V ;
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