| Part number | 2SB649 |
|---|---|
| Datasheet | 2SB649_InchangeSemiconductor.pdf |
| File Size | 212.49 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
|
·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SB649 | Silicon PNP Transistor | Hitachi Semiconductor |
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2SB649 | PNP Transistor | LGE |
 |
2SB649 | Silicon PNP Power Transistors | SavantIC |
 |
2SB649 | BIPOLAR POWER TRANSISTOR | UTC |
 |
2SB649 | PNP Transistor | Weitron Technology |
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