Datasheet Details
| Part number | 2SB649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 2SB649 Datasheet
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| Part number | 2SB649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
2SB649 Datasheet
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High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Volta
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