2SB874
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -1.5A
- plement to Type 2SD1177
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-2
Collector Current-Peak
Total Power Dissipation @ TC=25℃
Junction Temperature
-3
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
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