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2SB874 - Silicon PNP Power Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1.5A Complement to Type 2SD1177 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency

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Datasheet Details

Part number 2SB874
Manufacturer Inchange Semiconductor
File Size 217.04 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor 2SB874 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1.5A ·Complement to Type 2SD1177 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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