Datasheet Details
| Part number | 2SB874 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.04 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB874 Download (PDF) |
|
|
| Part number | 2SB874 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.04 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB874 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1.5A ·Complement to Type 2SD1177 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB874 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= -10mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
isc Silicon PNP Power Transistor 2SB874.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB874 | Silicon PNP Transistor | Hitachi |
| Part Number | Description |
|---|---|
| 2SB817 | Silicon PNP Power Transistor |
| 2SB821 | Silicon PNP Power Transistors |
| 2SB834 | Silicon PNP Power Transistors |
| 2SB855 | Silicon PNP Power Transistor |
| 2SB856 | Silicon PNP Power Transistor |
| 2SB857 | Silicon PNP Power Transistor |
| 2SB859 | Silicon PNP Power Transistor |
| 2SB881 | Silicon PNP Power Transistor |
| 2SB882 | Silicon PNP Power Transistor |
| 2SB883 | Silicon PNP Power Transistor |