Datasheet Details
| Part number | 2SB891 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.14 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB891-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB891.
| Part number | 2SB891 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.14 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB891-InchangeSemiconductor.pdf |
|
|
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·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SD1189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stage of audio amplifier, voltage regulator,DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB891 | Epitaxial Planar PNP Silicon Transistor | Rohm |
|
2SB891F | Medium Power Transistor | Rohm |
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2SB891F | SILICON POWER TRANSISTOR | SavantIC |
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