Datasheet4U Logo Datasheet4U.com

2SB891 - Silicon PNP Power Transistor

General Description

High Collector Current -IC= -2A Good Linearity of hFE Low Collector Saturation Voltage Complement to Type 2SD1189 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltag

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB891 Epitaxial Planar PNP Silicon Transistor Rohm
2SB891F Medium Power Transistor Rohm
2SB891F SILICON POWER TRANSISTOR SavantIC
2SB892 PNP Transistor Sanyo Semicon Device
2SB892 PNP Transistor Jiangsu Changjiang Electronics

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB897 Silicon PNP Power Transistor
2SB817 Silicon PNP Power Transistor
2SB821 Silicon PNP Power Transistors
2SB834 Silicon PNP Power Transistors
2SB855 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SB891 DESCRIPTION ·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SD1189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stage of audio amplifier, voltage regulator,DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.