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2SB891 - Silicon PNP Power Transistor

Description

High Collector Current -IC= -2A Good Linearity of hFE Low Collector Saturation Voltage Complement to Type 2SD1189 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltag

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isc Silicon PNP Power Transistor 2SB891 DESCRIPTION ·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SD1189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stage of audio amplifier, voltage regulator,DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.
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