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2SB900 - Silicon PNP Power Transistor

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Part number 2SB900
Manufacturer Inchange Semiconductor
File Size 183.99 KB
Description Silicon PNP Power Transistor
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Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A Wide area of safe operation Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications .

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