2SB900 Description
·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.