Datasheet4U Logo Datasheet4U.com

2SB920 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SB920.

General Description

·High Collector Current:IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·plement to Type 2SD1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose large current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;

2SB920 Distributor