Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A
Good Linearity of hFE
Large Collector Current IC
Complement to Type 2SD1270
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power switching appl
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isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
2 W
40
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB945
isc website：www.iscsemi.
2SB945 Datasheet
