2SB946 Datasheet PDF - Inchange Semiconductor Silicon PNP Power Transistor Specs

2SB946 - Silicon PNP Power Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -5A Good Linearity of hFE Large Collector Current IC Complement to Type 2SD1271 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching appl

Datasheet Details

Part number	2SB946
Manufacturer	Inchange Semiconductor
File Size	217.90 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB946 Datasheet
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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB946 isc website：www.iscsemi.

Published: Oct 25, 2013 |