2SB946A Datasheet PDF - Inchange Semiconductor Silicon PNP Power Transistor Specs

2SB946A - Silicon PNP Power Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -5A Good Linearity of hFE Large Collector Current IC Complement to Type 2SD1271A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching ap

Datasheet Details

Part number	2SB946A
Manufacturer	Inchange Semiconductor
File Size	218.00 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB946A Datasheet
Additional preview pages of the 2SB946A datasheet.

📁 Similar Datasheet

2SB946 - SILICON POWER TRANSISTOR (SavantIC)

2SB946 - Power Transistors (Panasonic Semiconductor)

2SB940 - PNP Transistor (Panasonic Semiconductor)

2SB940 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SB940 - SILICON POWER TRANSISTOR (SavantIC)

2SB940 - SILICON PNP TRANSISTOR (LZG)

2SB940A - SILICON POWER TRANSISTOR (SavantIC)

2SB940A - Power Transistors (Panasonic Semiconductor)

2SB941 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SB941 - SILICON POWER TRANSISTOR (SavantIC)

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB946A isc website：www.iscsemi.

Published: Oct 25, 2013 |