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2SB955 - Silicon PNP Power Transistor

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Part number 2SB955
Manufacturer Inchange Semiconductor
File Size 213.64 KB
Description Silicon PNP Power Transistor
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Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A Complement to Type 2SD1126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications.

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