2SB966 Overview
·Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB966 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -5.0A;.
