High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -2A
Complement to Type 2SD1308
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency
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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2SB974
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low-speed
switching industrial use.
2SB974 Datasheet
