Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.2V(Max)@ IC= 2.5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for High gain amplifier power switching...
