High Breakdown Voltage-
: V(BR)CBO= 300V(Min)
High Current-Gain
Bandwidth Product: fT= 20MHz(Min)@IC= 20mA
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Color TV sound output applications
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product: fT= 20MHz(Min)@IC= 20mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
150
mA
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
50
mA
1.
2SC2242 Datasheet
