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2SC2242 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product: fT= 20MHz(Min)@IC= 20mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2242 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2242 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA;

IB= 10mA VBE(on) Base-Emitter On Voltage IC= 50mA ;

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