2SC2242 Description
·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain Bandwidth Product: IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA;.
2SC2242 Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC2242 | Silicon NPN Transistor |
·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain Bandwidth Product: IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA;.