Datasheet4U Logo Datasheet4U.com

2SC2314 - Silicon NPN Power Transistor

General Description

Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω Collector Current- :IC=1.5A Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Amplifier Applications ABSOLUTE MAXIMU

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2314 NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
2SC2314 NPN EPITAXIAL PLANAR SILICON TRANSISTORS TGS
2SC2314 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC2310 Silicon NPN Transistor Hitachi Semiconductor
2SC2310 Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2233 Silicon NPN Power Transistor
2SC2242 Silicon NPN Power Transistor
2SC2247 Power Transistor
2SC2248 Power Transistor
2SC2293 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=1.5A ·Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 75 V VCER Collector-Emitter Voltage RBE=150Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2314 isc website：www.iscsemi.