Datasheet4U Logo Datasheet4U.com

2SC2408 - Silicon NPN RF Transistor

General Description

NF = 2.4 dB TYP.

︱S21e︱2 = 21 dB TYP.

performance and reliable operation.

Designed for use in high frequency wide band amplifier.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2408 DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 150 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.