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2SC2415 - Silicon NPN Power Transistor

General Description

High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed power switching applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2415 · isc website：www.iscsemi.