High Collector-Emitter Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Switching regulator and high voltage switching
applications
High speed DC-DC converter applications
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching
applications ·High speed DC-DC converter applications ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Pc
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
80
W
150
℃
Tstg
Storage Tempe
2SC2555 Datasheet
