2SC2759
DESCRIPTION
- Low Noise
- High Conversion Gain
Gcb= 12.5d B TYP. @IE= -5m A, VCB= 10V
APPLICATIONS
- Designed for use in VHF RF amplifier, local oscillator,mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
30 V
14 V
3V
50 m A
0.15 W
125 ℃
-55~125
℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO Collector Cutoff Current
VCB= 15V; IE= 0
0.1 μA h FE DC Current Gain
IC= 5m A ; VCE= 10V f...
