Datasheet Details
| Part number | 2SC2759 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 100.46 KB |
| Description | Silicon NPN RF Transistor |
| Download | 2SC2759 Download (PDF) |
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| Part number | 2SC2759 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 100.46 KB |
| Description | Silicon NPN RF Transistor |
| Download | 2SC2759 Download (PDF) |
|
|
|
·Low Noise ·High Conversion Gain Gcb= 12.5dB TYP.
@IE= -5mA, VCB= 10V APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator,mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 30 V 14 V 3V 50 mA 0.15 W 125 ℃ -55~125 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2759 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product.
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| 2SC2734 | Silicon NPN RF Transistor |
| 2SC2735 | Silicon NPN RF Transistor |
| 2SC2736 | Silicon NPN RF Transistor |
| 2SC2738 | Silicon NPN Power Transistors |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |
| 2SC2248 | Power Transistor |