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2SC2911 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Good Linearity of hFE High Switching Speed Complement to Type 2SA1209 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 10

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isc Silicon NPN Power Transistor 2SC2911 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1209 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver applications.