| Part number | 2SC3085 |
|---|---|
| Datasheet | 2SC3085-InchangeSemiconductor.pdf |
| File Size | 193.04 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3085 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3085 | NPN Triple Diffused Planar Silicon Transistor | Sanyo |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
| 2SC3123 | Silicon NPN RF Transistor |
| 2SC3124 | Silicon NPN RF Transistor |
| 2SC3125 | Silicon NPN RF Transistor |
| 2SC3127 | Silicon NPN RF Transistor |
| 2SC3130 | Silicon NPN RF Transistor |
| 2SC3198 | Silicon NPN Power Transistor |
| 2SC3230 | Silicon NPN Power Transistors |
