Datasheet4U Logo Datasheet4U.com

2SC3230 - Silicon NPN Power Transistors

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) Good Linearity of hFE Complement to Type 2SA1276 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3230 SILICON POWER TRANSISTOR SavantIC
2SC3231 NPN Transistor INCHANGE
2SC3231 SILICON POWER TRANSISTOR SavantIC
2SC3233 NPN TRIPLE DIFFUSED TRANSISTOR Toshiba Semiconductor
2SC3233 NPN Silicon Triple Diffused Transistor Kexin

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3252 Power Transistor
2SC3085 Silicon NPN Power Transistor
2SC3094 Silicon NPN Power Transistor
2SC3121 Silicon NPN RF Transistor
2SC3122 Silicon NPN RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1276 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3230 isc website：www.iscsemi.