| Part number | 2SC3230 |
|---|---|
| Datasheet | 2SC3230_InchangeSemiconductor.pdf |
| File Size | 198.58 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·plement to Type 2SA1276 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3230 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3230 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
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| 2SC3252 | Power Transistor |
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| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
| 2SC3123 | Silicon NPN RF Transistor |
| 2SC3124 | Silicon NPN RF Transistor |
| 2SC3125 | Silicon NPN RF Transistor |
| 2SC3127 | Silicon NPN RF Transistor |
| 2SC3130 | Silicon NPN RF Transistor |
