Datasheet Details
| Part number | 2SC3422 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3422-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3422.
| Part number | 2SC3422 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3422-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1359 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3422 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB=0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3422 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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| 2SC3462 | Power Transistor |
| 2SC3475 | Power Transistor |
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| 2SC3480 | Power Transistor |
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