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2SC3422 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) Good Linearity of hFE Complement to Type 2SA1359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier Low speed switching Suitable fo

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isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1359 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.