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2SC3502 - Silicon NPN Power Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 200 V Complement to Type 2SA1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V ·Complement to Type 2SA1380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dssipation Ta=25℃ PC Collector Power Dssipation TC=25℃ Ti Junction Temperature 0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3502 isc website：www.iscsemi.