Datasheet Details
| Part number | 2SC3552 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.18 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3552_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3552 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.18 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3552_InchangeSemiconductor.pdf |
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·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3552 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3552 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC3550 | Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |
| 2SC3547A | Silicon NPN RF Transistor |
| 2SC3561 | N-Channel MOSFET Transistor |