| Part number | 2SC3552 |
|---|---|
| Datasheet | 2SC3552_InchangeSemiconductor.pdf |
| File Size | 202.18 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3552 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3550 | Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |
| 2SC3547A | Silicon NPN RF Transistor |
| 2SC3561 | N-Channel MOSFET Transistor |
