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2SC3619 - Silicon NPN Power Transistors

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage switching and amplifier applications.

Color TV horizontal driver applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 100 mA IB Base Current-Continuous 50 mA PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3619 isc website：www.iscsemi.