High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulator and high voltage switching applications
High speed DC-DC converter applica
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
8 A
10
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
2 W
40
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3626
isc webs
2SC3626 Datasheet
