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2SC3626 - Silicon NPN Power Transistors

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Part number 2SC3626
Manufacturer Inchange Semiconductor
File Size 195.87 KB
Description Silicon NPN Power Transistors
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector

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