| Part number | 2SC3657 |
|---|---|
| Datasheet | 2SC3657_InchangeSemiconductor.pdf |
| File Size | 201.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3657 | NPN Transistor | Toshiba Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3658 | Silicon NPN Power Transistors |
| 2SC3659 | Silicon NPN Power Transistors |
| 2SC3619 | Silicon NPN Power Transistors |
| 2SC3626 | Silicon NPN Power Transistors |
| 2SC3627 | Silicon NPN Power Transistors |
| 2SC3636 | Silicon NPN Power Transistors |
| 2SC3637 | Silicon NPN Power Transistors |
| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3640 | Silicon NPN Power Transistor |
| 2SC3678 | Silicon NPN Power Transistors |
