2SC3688 - Silicon NPN Power Transistors

Datasheet Summary

Description

High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

deflection output applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SC3688
Manufacturer	Inchange Semiconductor
File Size	198.16 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC3688 Datasheet
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isc Silicon NPN Power Transistor 2SC3688 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Oct 25, 2013 |