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2SC3694 - Silicon NPN Power Transistors

Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 12A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications A

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isc Silicon NPN Power Transistor 2SC3694 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 7.
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