High Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min)
High Switching Speed
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high speed switching and horizontal deflection
output ap
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching and horizontal deflection
output applications.
2SC3737 Datasheet
