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2SC3737 - Power Transistor

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Part number 2SC3737
Manufacturer Inchange Semiconductor
File Size 195.33 KB
Description Power Transistor
Datasheet download datasheet 2SC3737 Datasheet
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Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Col

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