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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3838
DESCRIPTION ·Low Noise
NF = 3.5 dB TYP. @VCE = 6 V, IC = 2 mA, f = 500 MHz ·High Current-Gain Bandwidth Product
fT = 3.2 GHz TYP. @VCE = 10 V, IC = 10 mA, f = 500 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
11
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.2
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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