Datasheet Details
| Part number | 2SC3883 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.72 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3883-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SC3883.
| Part number | 2SC3883 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.72 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3883-InchangeSemiconductor.pdf |
|
|
|
·High Breakdown Voltage- : VCEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current- Continuous 5.0 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Part Number | Description |
|---|---|
| 2SC3884 | Power Transistor |
| 2SC3885 | Power Transistor |
| 2SC3834Y | Silicon NPN Transistor |
| 2SC3838 | Silicon NPN Transistor |
| 2SC3841 | Silicon NPN Transistor |
| 2SC3852A | Silicon NPN Power Transistor |
| 2SC3856-P | Silicon NPN Transistor |
| 2SC3862 | Silicon NPN Transistor |
| 2SC3866 | Silicon NPN Power Transistors |
| 2SC3871 | Power Transistor |