Datasheet4U Logo Datasheet4U.com

2SC3883 - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCEO= 800V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Horizontal deflection output for high resolution display.

High speed switching regulator output applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC388 Transistor ETC
2SC388 NPN Plastic-Encapsulated Transistor Secos
2SC388 NPN TRANSISTOR JCST
2SC388 Transistors USHA
2SC388 NPN Transistor KOO CHIN

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3884 Power Transistor
2SC3885 Power Transistor
2SC3834Y Silicon NPN Transistor
2SC3838 Silicon NPN Transistor
2SC3841 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SC3883 DESCRIPTION ·High Breakdown Voltage- : VCEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current- Continuous 5.0 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.