Datasheet Details
| Part number | 2SC3990 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.98 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3990-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3990.
| Part number | 2SC3990 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.98 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3990-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 35 A ICM Collector Current-Peak 50 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3990 | Silicon NPN Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC3991 | Silicon NPM Power Transistor |
| 2SC3992 | Silicon NPN Power Transistor |
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| 2SC3996 | Silicon NPN Transistor |
| 2SC3997 | Silicon NPN Transistor |
| 2SC3998 | Silicon NPN Power Transistor |
| 2SC3942 | Silicon NPN Power Transistor |
| 2SC3968 | Power Transistor |
| 2SC3989 | Silicon NPN Power Transistor |